Applications
Unique RF switch technology to replace PIN diodes
Replacing Apollo era technology with modern GaN RF technology for RF switches
RF switching in Apollo era during 1960s was based on the PIN diode solution, technology which is still in use today. PIN diodes require complex biasing network consisting multiple passive components as well high voltage generation upto 200V and high voltage controller. TagoreTech RF GaN switches offer modern integrated RF solution with minimal number of components and 1000x smaller power consumption. Time to change your RF design to year 2025.
PIN diode solution
• 55 components
• 300mm2 board space
• 2500 mW power consumption
• Complex design
• Performance variation in production
Tagore RF GaN Switch
• 2…4 components
• Less than 30mm2 board space
• Less than 1mW power consumption
• Simple RF design, no need to spend time for
switch design
• No high voltage present on board, less
EMI/EMC issues
• Stable production, no yield loss
TagoreTech RF GaN enables modern RF switching from 1MHz to 7GHz, supporting power levels from 10W to 200W Pavg. We expect to support upto 12GHz during year 2026 with even more products. Do not struggle complex design with PIN diodes, use TagoreTech RF switches to simplify your design.
5G CELLULAR INFRASTRUCTURE
TagoreTech RF Components: Smarter Design for Superior Radio Performance
TagoreTech offers portfolio of RF components for RF Fronted section of Public Safety and Tactical Radio. We have wide portfolio of GaN Power Amplifiers suitable for frequency range between 30 – 4000MHz. Our Application Team has developed several application EVBs for your evaluation of our devices. TagoreTech also offer wide portfolio of RF switches needed to route RF signal to respective harmonic filters. Our Portfolio Includes RF Switches from 10W to 200W of Average Power in small QFN package. Unlike PIN Diode switches, our switches operate from 3/5V supply with no additional high voltage supply or passive components; which have saved significant board space for our customers. We also offer low Ron, high peak voltage handling switches to realize tunable Harmonic filter. RF Performance of the switches are optimized to meet Power, Isolation and harmonic performance of the Radio. TagoreTech also offer Low Noise Amplifier needed for the Frontend.
Please contact our Application team support@tagoretech.com for detailed datasheet of our products or follow these links for further info:
Radar RF Front end
TagoreTech offers unique RF GaN RF switches for Radar RF Front-ends. For failsafe switch, PIN diodes consume constantly 2W per failsafe switch. In modern phased array radar antennas, one might have 2 000 elements. During Rx mode, antenna is consuming 4kW to bias PIN diodes.
TagoreTech GaN RF switches require only 1mW biasing power for Radar RF Failsafe switch. This leads that during Rx, whole antenna array will consume 4W for powering RF switches. We offer 1000x lower power consumption compared to PIN diodes. Come and talk to us.
Drone Datalinks
Modern drone datalinks are versatile, high-performance systems that facilitate safe, long-range, and high-bandwidth communication. They leverage advanced RF technologies, encryption, and network architectures to support a wide range of applications including inspection, delivery, surveillance, and beyond.
TagoreTech RF GaN components offer significant Size, Weight and Cot benefit for drone datalinks, enabled by RF GaN technology. Electronic Warfare and jamming countermeasures require high power datalinks. We offer unique solutions from 5W upto 200W power levels to ensure uninterrupted communications. Come and talk to us.
Applications notes
AN11 Tuning Switches for antenna and filter applications
AN11_Tuning_Switches.pdf
AN10 Bypass internal charge pump for very low noise floor
AN10_Bypass_internal_charge_pump.pdf
Articles and white papers
